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| NTP75N06L, NTB75N06L Power MOSFET 75 Amps, 60 Volts, Logic Level N-Channel TO-220 and D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Typical Applications http://onsemi.com * * * * Power Supplies Converters Power Motor Controls Bridge Circuits 75 AMPERES 60 VOLTS RDS(on) = 11 m N-Channel D Value 60 60 "20 "15 75 50 225 214 1.4 2.4 -55 to +175 844 Adc Apk W W/C W C mJ TO-220AB CASE 221A STYLE 5 2 3 Unit Vdc Vdc Vdc VGS VGS ID ID IDM PD G 4 S 1 2 3 D2PAK CASE 418B STYLE 2 4 MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Drain-to-Source Voltage Drain-to-Gate Voltage (RGS = 10 M) Gate-to-Source Voltage - Continuous - Non-Repetitive (tpv10 ms) Drain Current - Continuous @ TA = 25C - Continuous @ TA = 100C - Single Pulse (tpv10 s) Total Power Dissipation @ TA = 25C Derate above 25C Total Power Dissipation @ TA = 25C (Note 1.) Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25C (VDD = 50 Vdc, VGS = 5.0 Vdc, L = 0.3 mH IL(pk) = 75 A, VDS = 60 Vdc) Thermal Resistance - Junction-to-Case - Junction-to-Ambient (Note 1.) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VDGR 1 TJ, Tstg EAS MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain 4 Drain C/W RJC RJA TL 0.7 62.5 260 C NTP75N06L LLYWW 1 Gate 2 Drain 3 Source 1 Gate NTB75N06L LLYWW 1. When surface mounted to an FR4 board using minimum recommended pad size, (Cu Area 0.412 in2). 2 Drain 3 Source NTx75N06L LL Y WW = Device Code = Location Code = Year = Work Week ORDERING INFORMATION Device NTP75N06L NTB75N06L NTB75N06LT4 Package TO-220AB D2PAK D2PAK Shipping 50 Units/Rail 50 Units/Rail 800/Tape & Reel (c) Semiconductor Components Industries, LLC, 2001 1 April, 2001 - Rev. 0 Publication Order Number: NTP75N06L/D NTP75N06L, NTB75N06L ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 2.) (VGS = 0 Vdc, ID = 250 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150C) Gate-Body Leakage Current (VGS = 15 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 2.) Gate Threshold Voltage (Note 2.) (VDS = VGS, ID = 250 Adc) Threshold Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance (Note 2.) (VGS = 5.0 Vdc, ID = 37.5 Adc) Static Drain-to-Source On-Voltage (Note 2.) (VGS = 5.0 Vdc, ID = 75 Adc) (VGS = 5.0 Vdc, ID = 37.5 Adc, TJ = 150C) Forward Transconductance (Note 2.) (VDS = 15 Vdc, ID = 37.5 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 3.) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (VDS = 48 Vdc, ID = 75 Adc, Vd Ad VGS = 5.0 Vdc) (Note 2.) SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage Reverse Recovery Time (IS = 75 Adc, VGS = 0 Vdc, Ad Vd dIS/dt = 100 A/s) (Note 2.) Reverse Recovery Stored Charge 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. (IS = 75 Adc, VGS = 0 Vdc) (Note 2.) (IS = 75 Adc, VGS = 0 Vdc, TJ = 150C) VSD trr ta tb QRR - - - - - - 1.0 0.9 70 43 27 0.16 1.15 - - - - - C Vdc ns (VDD = 30 Vdc, ID = 75 Adc, VGS = 5.0 Vdc, RG = 9.1 ) (Note 2.) td(on) tr td(off) tf QT Q1 Q2 - - - - - - - 22 265 113 170 66 9.0 47 32 370 160 240 92 - - nC ns (VDS = 25 Vd VGS = 0 Vdc, Vdc, Vd f = 1.0 MHz) Ciss Coss Crss - - - 3122 1029 276 4370 1440 390 pF VGS(th) 1.0 - RDS(on) - VDS(on) - - gFS - 0.75 0.61 55 0.99 - - mhos 9.0 11 Vdc 1.58 6.0 2.0 - Vdc mV/C mOhm V(BR)DSS 60 - IDSS - - IGSS - - - - 10 100 100 nAdc 72 74 - - Vdc mV/C Adc Symbol Min Typ Max Unit http://onsemi.com 2 NTP75N06L, NTB75N06L 160 ID, DRAIN CURRENT (AMPS) 140 120 100 80 60 40 VGS = 3 V 20 0 0 1 2 3 4 VDS, DRAIN-TO-SOURCE VOLTAGE (V) VGS = 7 V VGS = 8 V VGS = 3.5 V VGS = 10 V VGS = 5 V VGS = 6 V VGS = 4 V 160 ID, DRAIN CURRENT (AMPS) 140 120 100 80 60 40 20 0 1.4 TJ = 25C TJ = 100C TJ = -55C 1.8 2.2 2.6 3 3.4 3.8 4.2 4.6 5 VGS, GATE-TO-SOURCE VOLTAGE (V) VGS = 4.5 V VDS w 10 V Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE () 0.02 VGS = 5 V 0.016 RDS(on), DRAIN-TO-SOURCE RESISTANCE () 0.02 VGS = 10 V 0.016 TJ = 100C 0.012 TJ = 25C 0.008 0.012 TJ = 100C TJ = -55C 0.008 TJ = 25C TJ = -55C 0.004 0 20 40 60 80 100 120 ID, DRAIN CURRENT (AMPS) 0.004 0 20 40 60 80 100 120 ID, DRAIN CURRENT (AMPS) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) Figure 3. On-Resistance vs. Gate-to-Source Voltage 2 1.8 1.6 1.4 1.2 1 0.8 0.6 -50 10 -25 0 25 50 75 100 125 150 175 0 ID = 37.5 A VGS = 5 V IDSS, LEAKAGE (nA) 10000 100000 Figure 4. On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 150C 1000 TJ = 125C 100 TJ = 100C 10 20 30 40 50 60 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 NTP75N06L, NTB75N06L 12000 VDS = 0 V 10000 C, CAPACITANCE (pF) Ciss 8000 6000 4000 2000 Crss 0 10 10 5 VGS 0 VDS 5 15 20 GATE-TO-SOURCE OR DRAIN-TO-SOURCE (V) 25 Crss Ciss Coss VGS = 0 V TJ = 25C VGS, GATE-TO-SOURCE VOLTAGE (V) 6 5 Q1 4 3 2 1 0 ID = 75 A TJ = 25C 0 10 20 30 40 50 60 70 QT VGS Q2 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 1000 IS, SOURCE CURRENT (AMPS) VDS = 30 V ID = 75 A VGS = 5 V tr tf 80 70 60 50 40 30 20 10 0 0.6 VGS = 0 V TJ = 25C t, TIME (ns) 100 td(off) 10 1 td(on) 10 RG, GATE RESISTANCE () 100 0.64 0.68 0.72 0.76 0.8 0.84 0.86 0.92 0.96 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variations vs. Gate Resistance 1000 ID, DRAIN CURRENT (AMPS) EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) 1000 Figure 10. Diode Forward Voltage vs. Current VGS = 15 V SINGLE PULSE TC = 25C 10 s ID = 75 A 800 100 100 s 1 ms 10 10 ms RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 0.1 1 dc 600 400 200 10 100 0 25 50 75 100 125 150 175 VDS, DRAIN-TO-SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 NTP75N06L, NTB75N06L r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 0.00001 0.0001 0.001 t2 DUTY CYCLE, D = t1/t2 0.01 t, TIME (s) 0.1 t1 P(pk) RJC(t) = r(t) RJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 1.0 10 Figure 13. Thermal Response http://onsemi.com 5 NTP75N06L, NTB75N06L PACKAGE DIMENSIONS TO-220 THREE-LEAD TO-220AB CASE 221A-09 ISSUE AA NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 -T- B 4 SEATING PLANE F T S C Q 123 A U K H Z L V G D N R J STYLE 5: PIN 1. 2. 3. 4. http://onsemi.com 6 NTP75N06L, NTB75N06L PACKAGE DIMENSIONS D2PAK CASE 418B-03 ISSUE D C E -B- 4 V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E G H J K S V INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.575 0.625 0.045 0.055 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 14.60 15.88 1.14 1.40 A 1 2 3 S -T- SEATING PLANE K G D 3 PL 0.13 (0.005) H M J TB M STYLE 2: PIN 1. 2. 3. 4. http://onsemi.com 7 NTP75N06L, NTB75N06L ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com Fax Response Line: 303-675-2167 or 800-344-3810 Toll Free USA/Canada N. American Technical Support: 800-282-9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor - European Support German Phone: (+1) 303-308-7140 (Mon-Fri 2:30pm to 7:00pm CET) Email: ONlit-german@hibbertco.com French Phone: (+1) 303-308-7141 (Mon-Fri 2:00pm to 7:00pm CET) Email: ONlit-french@hibbertco.com English Phone: (+1) 303-308-7142 (Mon-Fri 12:00pm to 5:00pm GMT) Email: ONlit@hibbertco.com EUROPEAN TOLL-FREE ACCESS*: 00-800-4422-3781 *Available from Germany, France, Italy, UK, Ireland CENTRAL/SOUTH AMERICA: Spanish Phone: 303-308-7143 (Mon-Fri 8:00am to 5:00pm MST) Email: ONlit-spanish@hibbertco.com Toll-Free from Mexico: Dial 01-800-288-2872 for Access - then Dial 866-297-9322 ASIA/PACIFIC: LDC for ON Semiconductor - Asia Support Phone: 303-675-2121 (Tue-Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001-800-4422-3781 Email: ONlit-asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 NTP75N06L/D |
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